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| Datasheet File OCR Text: |
| AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: * Gold Metallization * Hermetic Package * Input/Output Matching PACKAGE - .400 x .400 2NLFL MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC 7.0 A 50 V 220 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 0.80 C/W O O O O O O O 1 = COLLECTER 2 & 4 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE POUT PG C IC = 40 mA IC = 40 mA IE = 10 mA VCB = 50 V VCE = 5 V TC = 25 C TEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 65 65 3.0 12 UNITS V V V mA --W dB % IC = 2.0 A 20 90 8.4 38 100 44 120 f = 960 to 1215 MHz PIN = 13 W VCC = 50 V Pulse Width = 10 S Duty Cycle = 10% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 AM0912-080 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2 |
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